产品名称：2英寸图形化蓝宝石衬底／4英寸图形化蓝宝石衬底
产品介绍：图形化蓝宝石衬底（Patterned Sapphire Substrate，简称“PSS”）是在蓝宝石平片衬底表面通过匀胶、显影、蚀刻等工艺，制作具有微米级结构的图形。利于在图形化衬底上的横向生长技术，会有效减少外延层的缺陷，并显著提高LED的发光与出光效率。
用途：GaN基发光二级管(LED)、高功率器件
| 蓝宝石图形化衬底（Patterned Sapphire Substrate, PSS） | ||
| Item项目 | 2" | 4" |
| Crystal晶体 | LED Grade Sapphire | LED Grade Sapphire |
| Sapphire purity蓝宝石纯度 | ≥99.998% | ≥99.998% |
| Color颜色 | Transparent | Transparent |
| Orientation方向 | C plane tiled M axis 0.20°±0.1° | C plane tiled M axis 0.20°±0.1° |
| Diameter直径 | 50.8±0.1mm | 100±0.2mm |
| Thickness厚度 | 430±10μm | 650±10μm |
| Primary Flat Location定位面方向 | A-axis ± 0.2° | A-axis ± 0.2° |
| Flat Length定位面长度 | 16.0±1.0 mm | 30.0 ±1.0 mm |
| Front side surface抛光面 | Epi-ready patterned surface | Epi-ready patterned surface |
| Back side surface背面 | Fine ground; Ra < 1.2 um | Fine ground; Ra < 1.2 um |
| TTV平坦度 | ≤ 5.0μm | ≤ 10μm |
| BOW弯曲度 | ≤ -10μm | ≤ -20μm |
| Pattern diameter图形直径 | 2.7±0.15 um | 2.7±0.15 um |
| Pattern height图形高度 | 1.6±0.15 um | 1.6±0.15 um |
| Pattern space图形间距 | 0.3±0.15 um | 0.3±0.15 um |
| Pattern arrangement | Close-packed arrangement; hexagonal type | Close-packed arrangement; hexagonal type |
| 图形间距 | ||
| Defective patterns | Total defective area ≦3% of wafer area; Inspection by naked eye added without bright light | Total defective area ≦5% of wafer area; Inspection by naked eye added without bright light |
| 图形缺陷 | ||
| Scratch刮伤 | Visible to naked eye added without bright light; | Visible to naked eye added without bright light; |
| total length < 3mm | total length < 5mm | |
| Package包装 | Clean room, vacuum packing | Clean room, vacuum packing |
产品名称：2英寸图形化蓝宝石衬底／4英寸图形化蓝宝石衬底
产品介绍：图形化蓝宝石衬底（Patterned Sapphire Substrate，简称“PSS”）是在蓝宝石平片衬底表面通过匀胶、显影、蚀刻等工艺，制作具有微米级结构的图形。利于在图形化衬底上的横向生长技术，会有效减少外延层的缺陷，并显著提高LED的发光与出光效率。
用途：GaN基发光二级管(LED)、高功率器件
| 蓝宝石图形化衬底（Patterned Sapphire Substrate, PSS） | ||
| Item项目 | 2" | 4" |
| Crystal晶体 | LED Grade Sapphire | LED Grade Sapphire |
| Sapphire purity蓝宝石纯度 | ≥99.998% | ≥99.998% |
| Color颜色 | Transparent | Transparent |
| Orientation方向 | C plane tiled M axis 0.20°±0.1° | C plane tiled M axis 0.20°±0.1° |
| Diameter直径 | 50.8±0.1mm | 100±0.2mm |
| Thickness厚度 | 430±10μm | 650±10μm |
| Primary Flat Location定位面方向 | A-axis ± 0.2° | A-axis ± 0.2° |
| Flat Length定位面长度 | 16.0±1.0 mm | 30.0 ±1.0 mm |
| Front side surface抛光面 | Epi-ready patterned surface | Epi-ready patterned surface |
| Back side surface背面 | Fine ground; Ra < 1.2 um | Fine ground; Ra < 1.2 um |
| TTV平坦度 | ≤ 5.0μm | ≤ 10μm |
| BOW弯曲度 | ≤ -10μm | ≤ -20μm |
| Pattern diameter图形直径 | 2.7±0.15 um | 2.7±0.15 um |
| Pattern height图形高度 | 1.6±0.15 um | 1.6±0.15 um |
| Pattern space图形间距 | 0.3±0.15 um | 0.3±0.15 um |
| Pattern arrangement | Close-packed arrangement; hexagonal type | Close-packed arrangement; hexagonal type |
| 图形间距 | ||
| Defective patterns | Total defective area ≦3% of wafer area; Inspection by naked eye added without bright light | Total defective area ≦5% of wafer area; Inspection by naked eye added without bright light |
| 图形缺陷 | ||
| Scratch刮伤 | Visible to naked eye added without bright light; | Visible to naked eye added without bright light; |
| total length < 3mm | total length < 5mm | |
| Package包装 | Clean room, vacuum packing | Clean room, vacuum packing |
